Moment inequalities and high-energy tails for electron distribution function of the Boltzmann transport equation in semiconductors
نویسنده
چکیده
In this paper we prove the existence of the high-energy tails for electron distribution function of the Boltzmann equation for semiconductors, in the stationary and homogeneous regime, in the analytic band approximation and scattering with acoustic and optical phonons and impurities. We also prove numerically that the tail is a global maxwellian in the parabolic band approximation, and in the quasi parabolic band case, a power law of the global maxwellian. keywords Boltzmann-Poisson system for semiconductors, Monte Carlo Method, Semiconductors. MSC classifications 76P05, 65C05,82B35,
منابع مشابه
Moment Inequalities and High-energy Tails for the Boltzmann Equations with Inelastic Interactions
We study the high-energy asymptotics of the steady velocity distributions for model systems of granular media in various regimes. The main results obtained are integral estimates of solutions of the hard-sphere Boltzmann equations, which imply that the velocity distribution functions f(v) behave in a certain sense as C exp(−r|v|s) for |v| large. The values of s, which we call the orders of tail...
متن کاملMoment Inequalities and High-Energy Tails for Boltzmann Equations with Inelastic Interactions
We study the high-energy asymptotics of the steady velocity distributions for model systems of granular media in various regimes. The main results obtained are integral estimates of solutions of the hard-sphere Boltzmann equations, which imply that the velocity distribution functions f(v) behave in a certain sense as C exp(−r|v|s) for |v| large. The values of s, which we call the orders of tail...
متن کاملThe Quantum Statistical Mechanical Theory of Transport Processes
A new derivation of the quantum Boltzmann transport equation for the Fermion system from the quantum time evolution equation for the wigner distribution function is presented. The method exhibits the origin of the time - irreversibility of the Boltzmann equation. In the present work, the spin dependent and indistinguishibility of particles are also considered.
متن کاملModeling of Transport through Submicron Semiconductor Structures: A Direct Solution of the Coupled Poisson-Boltzmann Equations
We report on a computational approach based on the self-consistent solution of the steady-state Boltzmann transport equation coupled with the Poisson equation for the study of inhomogeneous transport in deep submicron semiconductor structures. The nonlinear, coupled Poisson-Boltzmann system is solved numerically using finite difference and relaxation methods. We demonstrate our method by calcul...
متن کاملBoltzmann Solver for Phonon Transport
Boltzmann Transport Equation is solved numerically to model phonon transport in a subcontinuum domain in order to study heat transfer in thin film semiconductors. The phonon distribution function is modified to get an Energy equation from the Boltzmann Transport Equation. Gray form of the Energy equation is solved in the Relaxation time approximation to get the Phonon Energy Density distributio...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2006